| PART |
Description |
Maker |
| DL4004-13 DL4006-13 |
RECTIFIER GPP 400V 1A SMD MELF 1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 800 V, SILICON, SIGNAL DIODE PLASTIC, MELF-2
|
Diodes, Inc.
|
| M6 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
|
SENSITRON SEMICONDUCTOR
|
| MD60F18 |
1,800 V Rectifiers 250 mA Forward Current 30 ns - 50 ns Recovery Time 0.25 A, SILICON, SIGNAL DIODE
|
Voltage Multipliers, Inc.
|
| HT11G10 HT17G |
1.0 AMP. Glass Passivated High Efficient Rectifiers
1 A, 800 V, SILICON, SIGNAL DIODE
|
Taiwan Semiconductor Company, Ltd
|
| BCW67BCW68 BCW68F Q62702-C1555 Q62702-C1893 BCW68 |
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| NTE290 NTE289 |
800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Quad Channel, 4/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125
Silicon Complementary Transistors Audio Power Amplifier, Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| EGP10A08 EGP10B-TP |
1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts
DIODE GPP 1A 100V HI EFF DO41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA
0.15 A, 35 V, SILICON, SIGNAL DIODE
0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.3 A, 50 V, SILICON, SIGNAL DIODE
|
TEMIC SEMICONDUCTORS
|
|
